| 摘要 |
PURPOSE:To realize the high density arrangement of bump electrodes with a high aspect ratio and obtain connection electrodes which facilitate flip chip bonding in a clean atmosphere without using flux by a method wherein the connection electrodes are composed of Au or Cu bumps formed by selective plating with photosensitive resist as a mask. CONSTITUTION:Connection electrodes 102 in the mounting structure wherein a semiconductor device 101 of flip chip type and a wiring board 103 are connected to each other are composed of Au or Cu bumps formed by selective plating with photosensitive resist as a mask. For instance, bump electrodes 102 whose main component is Au are formed on the LSI device 101 beforehand. Au/Sn electrodes 102' are formed under the bump electrodes 102 beforehand and the Au bumps 102 are formed on the electrodes 102' by electroplating. Further, Au/Sn electrodes 102'' whose composition is the same as the composition of the Au/Sn electrodes 102' of the LSI device 101 are formed on wiring metal layers 105 of the wiring board 103. the electrodes of both the sides are mutually aligned and heated and melted to connect the LSI device 101 to the wiring board 103 with bump electrodes 102 between.
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