| 摘要 |
PURPOSE:To make it possible to process equally a plurality of sheets of substrates without necessitating specially an increase in the apertures of plasma generating sources and an increase in the size of a device and irrespective of difference in the processing characteristics of the substrates by a method wherein the substrates to be processed are arranged almost vertically to the propagation direction of a micro wave and are installed in a vacuum container. CONSTITUTION:A plasma processing device; which has a microwave introducing tube 2, a reaction gas supply pipe 7, an exhaust gas system, magnetic field generating parts 4 and a vacuum container 1 and utilizes an electron cyclotron resonance; is used, substrates 12 to be processed are arranged a plurality of sheets almost vertically to the propagation direction of a microwave 3 and are installed in the container 1 and they are simultaneously processed. For example, Si wafers are used as the substrates 12, the surface to be processed are installed toward the tube 2, a microwave of 2.45GHz is introduced through the tube 2, He gas is introduced through a plasma gas supply pipe 8, SiH4 gas is introduced through the reaction gas supply pipe and moreover, the magnetic flux density of 875 gauss is continuously generated at the substrate installed region by magnetic field generating coils 4 and 5 and an amorphous Si film is simultaneously formed on 10 sheets of the substrate 12.
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