| 摘要 |
PURPOSE:To prevent an oxide film spacer from being etched by a method wherein impurity diffused layers are formed in part of a one conductivity type semiconductor substrate, a metal is ion-implanted in the impurity diffused layers and annealing is performed. CONSTITUTION:An oxide film 102 for element isolation is formed on a P-type Si substrate 101 and thereafter, a gate oxide film 103 is formed and N-type low-concentration diffused layers 105 are formed. Moreover, after an oxide film spacer 106 is formed on the sidewalls of a gate electrode 104, an ion- implantation of highconcentration arsenic is performed to form N-type high- concentration diffused layers 107 and annealing is performed. Ti 108 is ion- implanted and is treated with halogen lamps to form a Ti silicide 109 on the surfaces of the layers 107 and the surface of the gate electrode 104. An interlayer insulating oxide film 110 is formed by a chemical vapor growth method, the film 110 is etched and after contact holes are formed, Al III for a wiring material is formed. Thereby, the oxide film spacer can keep a sufficiently suitable shape to the isolation of source and drain regions from the gate electrode and the short between both can be prevented.
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