METHOD OF FORMING TRANSPARENT ELECTRICITY CONDUCTING FILM

摘要

PURPOSE:To obtain an electricity conducting film of a low surface resistance and a high transparency when making a transparent electricity conducting film using a dispersive medium in which at least N type metal oxide semiconductor powder is dispersed and a binding agent is contained by making a halogenated metal which is soluble in the dispersive medium and having an unsaturated oxidation number coexistent in the dispersive medium. CONSTITUTION:Using fine powder of indium oxide doped with 1.0mol% of SnO as N type metal oxide semiconductor fine powder, it is made into light green powder of average particle size of about 0.5mum and of a resistivity of 3.2OMEGAcm with normal valence control process. This indium oxide powder is then mixed with polyester resin and isophorone while adding a binding agent. A small amount of tin fluoride and dimethylformamide are melted in them. They are coated on a glass substrate by spin coat process and dried at 600 deg.C to make an electricity conducting film of a required thickness. In this way, the film is made to have a light transparency of about 90% and a surface resistance of an order of 10<3>.