| 摘要 |
PURPOSE:To execute the removal of a defective segment without a mechanical cutting by a method wherein an insulating film is provided on a metal deposited film on an n-type emitter layer having a defect and laminated electrode deposited films are each coated on the other normal electrodes to form step electrodes. CONSTITUTION:In a semiconductor substrate 1 consisting of 4 layers of a p-type emitter layer pE, an n-type base layer nB, a p-type base layer pB and an n-type emitter layer nE, gate electrodes 2 are provided on the above base layer pB and at the same time, a cathode electrode 3 is split and arranged on the emitter layer nE. In such a GTO element structure, in case a defective electrode 3a exists, an insulating film 6 is coated on this electrode 3a. After that, gate and cathode laminated electrodes 21 and 31 are each laminated on the other normal electrodes and the electrode film only laminated on the electrode 3a is removed to form step electrodes. Moreover, a contact electrode plate 4 is abutted on the cathode laminated electrode 31. If a device is constituted in such a way, the electrode 3a can be electrically eliminated without removing by mechanical cutting.
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