| 摘要 |
PURPOSE:To form a crystal thin film of a compound semiconductor of good quality on an insulating substrate by placing a linear strip heater in the vicinity of the compound semiconductor thin film side on the insulating substrate, and heating the insulating substrate with an auxiliary heating source. CONSTITUTION:On a substrate holder 101 in a crystal growth furnace 304, an evaporated InSb thin film 104 is provided so as to upwardly face. A nichrome wire 103 is provided in the position about 0.3mm above an indium oxide film 301 with both ends thereof being applied with a tension. In the position about 3cm thereabove, a halogen lamp 302 and a reflecting board 303 are provided. He is introduced from a gas introducing pipe 305, a substrate 102 is heated with the lamp 302, and simultaneously the nichrome wire is energized. The holder 101 is moved at a fixed speed by a motor 107, thereby to fusing the InSb thin film on the substrate 102 into the shape of a belt. With this, a crystal thin film of a compound semiconductor of good quality is formed on the substrate 102.
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