| 摘要 |
A semiconductor superlattice comprises a planar quantum well region and at least one local quantum well region which is in contact with the planar quantum well region or positioned in the inside thereof. The potential is higher in the planar quantum well region than in the local quantum well region so that carriers injected into the planar quantum well region are flowed into the local quantum well region. For the reason, the recombination of the carriers is effectively performed so that a semiconductor laser with a high performance is obtained.
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