发明名称 |
Process and apparatus for low pressure chemical vapor deposition of refractory metal |
摘要 |
A process and apparatus for the low pressure, cold wall, chemical vapor deposition of refractory metals, such as tungsten on a silicon wafer. The silicon wafer is introduced into a loading lock wherein the pressure is reduced to subatmospheric pressure. The silicon wafer is transferred to a deposition chamber where it is heated to an elevated temperature. A refractory metal carbonyl vapor is introduced into the deposition chamber and dissociates to deposit a refractory metal on the silicon wafer. The wafer is transferred to an unloading lock where it is allowed to cool and is then removed.
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申请公布号 |
US4817557(A) |
申请公布日期 |
1989.04.04 |
申请号 |
US19870092967 |
申请日期 |
1987.09.04 |
申请人 |
ANICON, INC. |
发明人 |
DIEM, MICHAEL;FISK, MICHAEL A.;GOLDMAN, JON C. |
分类号 |
C23C16/54;H01L21/285;(IPC1-7):C23C16/00 |
主分类号 |
C23C16/54 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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