| 摘要 |
PROBLEM TO BE SOLVED: To form a super junction structure having a high aspect ratio.SOLUTION: A semiconductor device manufacturing method comprises the steps of: forming an epitaxial layer EPI in a plurality of layers by employing a "trench fill method"; and forming trenches, respectively, at the stages of forming the plurality of layers. That is, as shown in FIG.3, for example, at the stage of forming the epitaxial layer EPI1, a trench TR1 is formed in the epitaxial layer EPI1, and subsequently, at the stage of forming the epitaxial layer EPI2, a trench TR2 is formed in the epitaxial layer EPI2, and at the stage of forming the epitaxial layer EPI3, a trench TR3 is formed in the epitaxial layer EPI3.SELECTED DRAWING: Figure 3 |
