发明名称 |
Process for etch of tungsten |
摘要 |
A process for etch of tungsten which utilizes both in situ and remote plasmas, and a gas mixture for the plasma which comprises SF6, HBr, and a source of hydrocarbons at low pressure and ambient temperature to product an etch which is both selective to silicon dioxide and photoresist and anisotropic.
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申请公布号 |
US4842676(A) |
申请公布日期 |
1989.06.27 |
申请号 |
US19870122605 |
申请日期 |
1987.11.17 |
申请人 |
TEXAS INSTRUMENTS INCORPORATED |
发明人 |
JUCHA, RHETT B.;DAVIS, CECIL J.;LOEWENSTEIN, LEE M. |
分类号 |
C23F4/00;H01L21/3213 |
主分类号 |
C23F4/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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