| 摘要 |
The manufacturing method for MOSFET for VLSI icludes the steps that: (a) source and drain region made by foreign atom diffusion layers (9a,b) are formed on a silicon substrate (1); (b) a gate electrode (40) with polycrystalline silicon is deposited on a gate insulating film (30); (c) side walls (5a,b) are formed at the gate electrode sides and contact the same as well as the diffusion layer for insulation of electrode from the diffusion layer; (d) metal silicide films (7a,b,c) are deposited on the diffusion layer and the gate electrode; (e) metal oxide films (10a,b,c) are formed on the silicide films and side walls. |
