| 摘要 |
Example implementations relate to determining resistive state of memristors in a crossbar memory. For example, a method includes biasing each row of memristors and each column of memristors of the crossbar memory with a first voltage, and biasing a target column of memristors corresponding to the memristor with a second voltage to determine background current flowing through the target column of memristors. The method also includes increasing the first voltage for the reference array of memristors up to a third voltage such that the current flowing through the target column is a first current, and switching between the third voltage of the reference array of memristors and the first voltage of a target row of memristors corresponding to the memristor. The method also includes determining a second current flowing through the target column and comparing the second current with the first current to identify the resistive state of the memristor. |
