| 摘要 |
PURPOSE:To minimize the size while improving the operating speed of a storage circuit device in which semiconductor non-volatile storing elements are used, by forming and extending zigzag a reference potential line and a digit line of memory cells and connecting them to the regions of the memory cells. CONSTITUTION:A plurality of element forming regions CH1, CH2 are arranged linearly on a semiconductor substrate and these element forming regions are halved alternately, so that source regions 94a-94d and drain regions 92a-92d of memory cells are formed. An interconnecting layer ED1 for providing a reference potential line is formed on the source regions 94a-94d and it is connected with the source regions through contact holes CNT1, CNT3, CNT5. An interconnection layer D1 for providing a digit line is formed on the drain regions 92a-92d and it is connected with the drain regions through contact holes CNT2, CNT4. These interconnecting layers ED1 and D1 are formed zigzag so as to decrease the area occupied by the interconnection layers. |
