| 摘要 |
PURPOSE:To obtain a high degree of integration by forming a groove on a semiconductor substrate, forming a word line on the sldewall of the groove, and so laminating the electrodes of 2 layers for forming a capacitor each other as to be disposed along the inner face of the groove. CONSTITUTION:A word line 17 to become the gate electrode of a switching transistor 32 is formed on the sidewall of a groove 12 formed on a semiconductor substrate 11, and electrodes 23, 25 of two layers for forming a capacitor 33 are so laminated as to be disposed along the inner face of the groove 12. Accordingly, the planar area of the line 17 is small, the planar area of a memory cell 34 can be reduced, and the groove 12 is deepened thereby to increase its capacitance. Thus, since S/N can be increased at the rate of the planar area of the memory call, high integration can be obtained. |
