发明名称 |
Thin film transistor of active matrix liquid crystal display |
摘要 |
A thin film transistor of active matrix LCD comprising amorphous silicon layer formed on gate insulating layer and doped with phosphorous or boron, and insulating layer having two laminated structure and SiN layer formed between said two amorphous silicon layers so as to enhance characteristics of the TFT and protect short circuit in the cross points between the gate and source electrodes.
|
申请公布号 |
US5060036(A) |
申请公布日期 |
1991.10.22 |
申请号 |
US19890458324 |
申请日期 |
1989.12.28 |
申请人 |
SAMSUNG ELECTRON DEVICES CO., LTD. |
发明人 |
CHOI, KWANGSU |
分类号 |
G02F1/136;G02F1/1368;H01L29/49;H01L29/78;H01L29/786 |
主分类号 |
G02F1/136 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|