| 摘要 |
An ion implanter has a sample table on which a sample is placed, and means for injecting ions into the sample by applying an ion beam to the sample on the sample table. The ion implanter has magnetic field applying means for generating radial magnetic fields on the surface of the sample from near the center of the sample to outside of the outer periphery of the sample. The secondary electrons generated when the ion beam irradiates the sample table or the sample, including the secondary electrons generated from the sample table near the outer periphery of the sample, are trapped in the magnetic fields and transferred to the central portion of the sample. The secondary electrons are attracted by the electrostatic charge of the ions injected to the surface of the sample and recombine with the ions. Consequently the electrostatic charge on the surface of the sample is decreased, preventing generation of device defects caused by electrostatic discharge damage.
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