发明名称 |
Photovoltaic device |
摘要 |
A photovoltaic device capable of obtaining a high open circuit voltage, in which crystallization of a semiconductor is accelerated from the first stage of formation thereof such that a thin layer of the semiconductor is crystallized, by doping an electrode disposed between the semiconductor and a substrate with an element which reacts with an element in the semiconductor to accelerate crystallization of the semiconductor or by disposing a film made from a compound doped with said element between the semiconductor and the substrate.
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申请公布号 |
US5085711(A) |
申请公布日期 |
1992.02.04 |
申请号 |
US19900480453 |
申请日期 |
1990.02.15 |
申请人 |
SANYO ELECTRIC CO., LTD. |
发明人 |
IWAMOTO, MASAYUKI;MINAMI, KOJI;WATANABE, KANEO |
分类号 |
H01L31/0224;H01L31/0368;H01L31/075;H01L31/20 |
主分类号 |
H01L31/0224 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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