Semiconductor device process using diffusant penetration and source layers for shallow regions

摘要

A semiconductor device is formed by a process in which a diffusant penetration layer and a diffusant source layer containing a boron dopant are formed overlaying the surface of a semiconductor substrate. The diffusant source layer is annealed to cause the boron dopant to controllably diffuse through the diffusant penetration layer to the semiconductor substrate to form a doped region at the surface. The diffusant source layer and the diffusant penetration layer are removed and a gate insulator is formed on the substrate surface overlaying the doped region. An N doped gate electrode is then formed overlaying the gate insulator.