发明名称 Gate multiplexed low noise charge pump
摘要 A charge pump having gate control voltages multiplexed to gates of FET driver circuits to precisely control charge injected by the charge pump to a low pass filter network. Large capacitors between the supply voltages and the respective gate control voltage derived from the particular supply voltage provide greater noise immunity which further reduces phase errors introduced by injected charge variations. The large capacitors help to hold the gate voltages constant, further controlling the injected charge.
申请公布号 US5164889(A) 申请公布日期 1992.11.17
申请号 US19910775629 申请日期 1991.10.10
申请人 SAMSUNG SEMICONDUCTOR, INC. 发明人 RUETZ, J. ERIC
分类号 H03L7/093;H03L7/089 主分类号 H03L7/093
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