| 摘要 |
PURPOSE:To finish a resist pattern on a wafer so as to bring it close to an ideal resist profile. CONSTITUTION:After developing a resist 5 on a wafer 1, the wafer 1 is mounted on a revolution type hot plate. By the revolution type hot plate, the wafer 1 is heated to the temperature, at which the resist is softened, and it is rotated along a circular trajectory, turning its surface for forming the resist toward the center of the revolution. To the resist 5 after developing, applied is the centrifugal force, which so acts as to press the resist against the wafer. As a result, the height of the resist is decreased and by the magnitude corresponding to the decreased height, the dimension of its width is increased. Therefore, the resist profile of the resist 5 after developing can be brought close to an ideal resist profile. |
