| 摘要 |
PURPOSE:To remove a photoresist on the surface of an oxide superconducting thin film without deteriorating the thin film by a method wherein when the photoresist film formed on the oxide superconducting thin film is removed, various conditions, such as a heating temperature and an atmosphere, are properly selected. CONSTITUTION:A photoresist film pattern is formed on an oxide superconducting thin film using a photoresist and thereafter, an etching of the oxide superconducting thin film is performed by reactive ion etching. An etching of the photoresist film is also performed simultaneously with the etching of the thin film. The etched oxide superconducting thin film is housed in a vacuum chamber, a heating is started at a point of time when the atmospheric pressure in the chamber is evacuated up to 1X10<-6>Torr and the heating is stopped at a point of time when the atmospheric pressure in the chamber is reduced up to 1X10<-10>Torr or lower. Thereby, the photoresist on the surface of the thin film can be removed without deteriorating the thin film or without contaminating or roughening the surface of the thin film. |
