发明名称 COMPOSITION FOR THICK-FILM RESISTOR FORMATION
摘要 <p>PURPOSE:To provide a composition, for thick-film resistor formation wherein a change in its resistance value is small in a reheating process when a glass coating operation or the like is performed after a resistor has been formed on a ceramic substrate and a thick-film resistor cab formed at good yield. CONSTITUTION:A composition for thick-film resistor formation is composed mainly of the following: a conductive powder which contains RuO2 and at least either Ag or Pd; a glass powder; and an organic vehicle. The composition contains 40 to 70wt.% of either Ag or Pd or both of them in its solid portion and 30 to 60wt.% of RuO2 and glass. The weight ratio of RuO2 to glass is set within a range of 2:8 to 4:6.</p>
申请公布号 JPH0590006(A) 申请公布日期 1993.04.09
申请号 JP19910278773 申请日期 1991.09.30
申请人 SUMITOMO METAL MINING CO LTD 发明人 MAKUTA FUJIO
分类号 H01B1/16;H01C7/00 主分类号 H01B1/16
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