| 发明名称 |
Amorphous silicon thin film. |
| 摘要 |
<p>An amorphous silicon thin film is disclosed, which is produced by plasma CVD in which SiH4 and N2O are supplied during chemical vapor deposition as reacting source gases for the chemical vapor deposition.</p> |
| 申请公布号 |
EP0573030(A2) |
申请公布日期 |
1993.12.08 |
| 申请号 |
EP19930108922 |
申请日期 |
1993.06.03 |
| 申请人 |
SHOWA SHELL SEKIYU KABUSHIKI KAISHA |
发明人 |
NII, TETSURO;SICHANUGRIST, PORPONTH;KASE, TAKAHISA |
| 分类号 |
H01L21/205;H01L31/04;H01L31/20;(IPC1-7):H01L21/205 |
主分类号 |
H01L21/205 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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