| 摘要 |
PURPOSE:To improve the luminance and life of an AlGaInN light emitting diode. CONSTITUTION:A 500Angstrom AlN buffer layer 2, high carrier concentration n<+>-layer 3, approx. 2.2mum in film thickness and 2X10<18>/cm<3> in electron density, made of silicon-doped GaN, low carrier concentration n-layer 4, approx. 1.5mum and 1X10<16>/cm<3>, made of non-doped GaN, and p-layer 5, are formed on a sapphire substrate 1 in this order. The p-layer is of multilayer structure and consists of five sets of two layers; each set comprises a low carrier concentration p-layer L1, approx. 500Angstrom in film thickness and 1X10<16>/cm<3> in hole density, made of Mg-doped GaN and a high carrier concentration p<+>-layer H1, approx. 500Angstrom and 2X10<17>/cm<3>. As a result, the luminance and life are improved. |
