SELF-ALIGNED CONTACT FOR TRENCH POWER MOSFET

摘要

Embodiments of the present disclosure provide a self-aligned contact for a trench power MOSFET device. The device has a layer of nitride provided over the conductive material in the gate trenches and over portions of mesas between every two adjacent contact structures. Alternatively, the device has an oxide layer over the conductive material in the gate trenches and over portions of mesas between every two adjacent contact structures. It is emphasized that this abstract is provided to comply with rules requiring an abstract that will allow a searcher or other reader to quickly ascertain the subject matter of the technical disclosure. It is submitted with the understanding that it will not be used to interpret or limit the scope or meaning of the claims.

主权项

1. A device, comprising:
a semiconductor substrate; a plurality of gate trenches formed in the semiconductor substrate, each gate trench being lined with an insulating material along sidewalls inside the gate trench, each gate trench having a conductive material in the gate trench; and a plurality of contact structures, each contact structure being formed adjacent to a corresponding one of the plurality of trenches and being filled with conductive materials, wherein a layer of nitride provided over the conductive material in the gate trenches and over portions of mesas between adjacent contact structures of the plurality of contact structures.