MANUFACTURING METHOD OF SI HETERO-JUNCTION BIPOLAR TRANSISTOR USING GE COLLECTOR

摘要

The method includes the steps of forming an N+ type Ge layer (21) on a P type Si substrate, sequentially forming a Ge layer (22) and a SiGe layer (23) onto the layer (21), etching the layers (22,23) to define the collector and base regions, sequentially forming an Si emitter (24) and a contact layer (25) onto the SiGe base region, and forming electrode films thereonto. The transistor uses the Ge layer a collector region to reduce the passing time of electrons to improve the device operating rate and frequency.