PROCESS FOR PRODUCING FINE PATTERN

摘要

The fine pattern fabricating method using DUA (Deep Ultraviolet), g-line and i-line beam to form a pattern on the semiconductor wafer includes the first process forming the insolubility layer to alkali by softly baking the wafer on top of which the positive type photo resist layer is formed; the second step forming the fine patterns by exposing the beam to develop and heat treating the patterns.