| 摘要 |
PURPOSE:To form a semiconductor device which has the function of a large area light emitting type optical switch or the function of a high efficiency solar cell on a low cost substrate such as a glass substrate by a method wherein high quality a-Si:H is employed. CONSTITUTION:A transparent conductive electrode 102 which is made of, for instance, conductive oxide such as ITO (indium-tin oxide), ZnO or SnO2 is formed on a transparent insulating substrate 101 such as a glass substrate. Then an a-Si:H layer 103 which shows p-type electrical characteristics and an a-Si:H layer 104 which shows n-type electrical characteristics are built up. Further, after a p-type a-Si:H layer 105 and an n-type a-Si:H layer 106 are repeatedly built up, a conductive electrode 107 which is made of, for instance, ITO, ZnO, SnO2, Cr, Al, Mo or the like is formed. The respective layers are built up by a plasma CVD method with mixed gas composed of rare gas and material gas having different mixing ratios. |
