| 摘要 |
PURPOSE:To provide an improved method wherein a solar cell absorption layer of copper-indium-selenium tertiary alloy with the atomic ratio controlled within a desired narrow region can be stably fabricated. CONSTITUTION:An inhomogeneous thin film that contains copper and indium at a molar ratio of about 1:1 and contains selenium at a molar ratio of 2 or less with respect to copper or indium is formed on a conductive substrate. Theta, the thin film is heat-treated in an atmosphere containing selenium vapor and is hereby converted to a tertiary alloy layer of a molar ratio of copper: indium:selenium of about 1:1:2. Hereby, a solar cell absorption layer is fabricated, which is high in crystallinity, dense, and is reduced in any defect. |
