| 摘要 |
PURPOSE:To simplify a structure, realize high reliability and improve integration density by exposing an electrode pad at the side surface of a laminated semiconductor substrate and mutually connect the pad and semiconductor substrate with a wiring layer formed at the side surface thereof to form the integrated circuit function. CONSTITUTION:A semiconductor substrate 8 on which an electrode pad 9 is formed is stacked in a plurality sheets. The electrode pad 9 is exposed at the side surface of the stacked semiconductor substrate 8 and these are mutually connected with a wiring layer 10,formed at the side surface thereofto form an integrated circuit function. As explained above, since the semiconductor substrate 8 is stacked in direct without using wiring substrate and the electrode pad 9 exposed at the side surface is mutually connected with the gas deposition method, the volume occupied by the semiconductor device can be made very small to obtain a very small size and high functional semiconductor device can be obtained. Moreover, since the constitution is simplified, high reliable device can be fabricated easily. |
