| 摘要 |
<p>PURPOSE:To prevent the reduction of resistance between a source and a drain due to the remaining etching of an a-Si along the level difference of a gate insulating film by an auxiliary capacitance electrode and to prevent the reduction of a voltage holding rate of a pixel capacitance and the short circuit between the source and the drain, as to an active matrix type liquid crystal display device using a TFT. CONSTITUTION:The device has such a structure that the auxiliary capacitance electrode 11S projects out of a display electrode 16 on the same plane. Thus, even in the case an a-Si13T due to defective etching remains in an area defined by the L-shaped level difference of the gate insulating film generated along the edge between the auxiliary capacitance electrode 11S and an auxiliary capacitance line 11SL, the a-Si13T does not reach the display electrode 16, and it is insulated from a drain line 17DL. Thus, the reduction of the resistance between the source and the drain is prevented.</p> |
