| 摘要 |
PURPOSE:To easily remove particles generated when silicon is irradiated with a laser beam and melted for marking. CONSTITUTION:When a silicon wafer 4 as a semiconductor device is irradiated with a laser beam to form a recess for marking, an oxidation gas including oxygen is fed to carry out marking. Alternatively, the surface of the wafer 4 is oxidized before irradiation with a laser beam, and then the wafer is irradiated with a laser beam L to carry out marking. Thus, by oxidizing the surface of particles generated in marking with laser irradiation and then cleaning the wafer with fluorine acid, the particles attached to the wafer can be easily removed. Also, by forming an oxide layer on the surface of the silicon wafer in advance, the particles attached to the wafer can be easily removed. |
