| 摘要 |
PURPOSE:To obtain a device capable of preventing erroneous operations in information transmission with noise from neighboring other wires uniformly distributed to two signal lines each by positioning at least one intersection section among bit line pairs at a second level of a semiconductor substrate different from a first level. CONSTITUTION:This device comprises a semiconductor substrate 1, a word line 200 and bit lines 3a, 3b intersecting each other on its main surface - bit lines 3a, 3b are positioned in the form of a pair of bit lines extending in parallel, a memory cell positioned at a position at which the word line 200 and bit lines 3a, 3b intersect each other, and a sense amplifying means for sensing and amplifying a difference in the voltages of the bit wire pair. The bit lines 3a, 3b of the pair of bit lines are positioned at a first level on the substrate 1 and has an intersection section so that the corresponding parts of the bit lines 3a, 3b of the bit line pair intersect laterally on the substrate 1 and one or more of the intersection sections is positioned at a second level on the substrate 1 different from the first level, for example, at an impurity diffusion wiring layer 9. |
