| 摘要 |
<p>PURPOSE: To uniformly lightly dope a semiconductor thin film at a low tempera ture. CONSTITUTION: A material gas which is formed by mixing the dopant gas to a semiconductor film forming gas is used for chemical vapor deposition, and a non-single crystal semiconductor thin film 2, which serves as the active layer of a transistor, is deposited on an insulated board 1. The dopant contained in the semiconductor thin film 2 is activated by irradiation with energy beams 3 and the threshold voltage of the transistor is adjusted in advance. The transistor is formed by integration by processing the semiconductor thin film 2.</p> |
