| 摘要 |
A nonvolatile semiconductor memory device includes a semiconductor substrate, a first gate insulating layer formed on a predetermined portion of the semiconductor substrate, a floating gate formed on the first gate insulating layer, a second gate insulating layer formed on the sides and surface of the floating gate, a source and drain formed in predetermined regions of the semiconductor substrate, placed on both sides of the floating gate, a conductive layer for the source and drain which is formed on the source and drain and comes into the contact with the second gate insulating layer formed on the sides of the floating gate, the surface of the conductive layer being placed in the same level of the second gate insulating layer, a source and drain line formed on the conductive layer for the source and drain, and a control gate which is formed on the second gate insulating layer and electrically isolated from the source and drain line.
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