| 摘要 |
A method for fabricating a semiconductor memory device is disclosed. According to the method for fabricating the semiconductor memory device, first, second and third gate electrodes(50,52,90) as a first electrode are electrically connected each other. A first storage electrode layer(50) is formed, with occupying a predetermined region of a gate electrode(30) and a wordline(34). An interconnection part(12) is connected to a source/drain region(not shown in a drawing) of the semiconductor substrate(10). A plate electrode layer(70) as a second electrode is formed and a dielectric layer electrically separates the first storage electrode layer(50) from the plate electrode layer(70). Thereby, a storage capacity is increased due to an increase of the surface area of the capacitor electrode, improving a characteristic of DRAM which needs a periodic refresh.
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