A FLASH EEPROM HAVING TRIPPLE STACKED CONTROL GATES

摘要

a source(3) and a drain(4) formed on a semiconductor substrate(7) and having a channel between them; a floating gate(2) formed on a part of the source(3) and the channel and insulated with an insulation film; a control gate(1) which is formed along an upper insulation film and a side insulation film in order not to be overlapped with the drain(4), being insulated with an insulation film; and a select gate(6) which is formed along the upper insulation film and the side insulation film of the control gate(1) and is insulated by having a part formed perpendicularly to the side insulation film and overlapped with the drain(4) region.