发明名称 SEMICONDUCTOR MEMORY DEVICE AND METHOD FOR MANUFACTURING SAME
摘要 According to one embodiment, the stacked body includes a plurality of stacked units and a first intermediate layer. Each of the stacked units includes a plurality of electrode layers and a plurality of insulating layers. Each of the insulating layers is provided between the electrode layers. The first intermediate layer is provided between the stacked units. The first intermediate layer is made of a material different from the electrode layers and the insulating layers. The plurality of columnar portions includes a channel body extending in a stacking direction of the stacked body to pierce the stacked body, and a charge storage film provided between the channel body and the electrode layers.
申请公布号 US2016329346(A1) 申请公布日期 2016.11.10
申请号 US201615213537 申请日期 2016.07.19
申请人 Kabushiki Kaisha Toshiba 发明人 SASAKI Toshiyuki
分类号 H01L27/115;H01L21/311;H01L23/532 主分类号 H01L27/115
代理机构 代理人
主权项
地址 Tokyo JP