发明名称 |
Semiconductor Structures and Methods of Manufacturing the Same |
摘要 |
A semiconductor device and methods of forming a semiconductor device are disclosed. In the methods, a layer, such as an insulating interlayer, is formed on a substrate. A first trench is formed in the layer, and a mask layer is formed in the first trench. The mask layer has a first thickness from a bottom surface of the first trench to the top of the mask layer. The mask layer is patterned to form a mask that at least partially exposes a sidewall of the first trench. A portion of the mask adjacent to the exposed sidewall of the first trench has a second thickness smaller than the first thickness. The layer is etched to form a second trench using the mask as an etching mask. The second trench is in fluid communication with the first trench. A conductive pattern is formed in the first trench and the second trench. |
申请公布号 |
US2016329236(A1) |
申请公布日期 |
2016.11.10 |
申请号 |
US201615170043 |
申请日期 |
2016.06.01 |
申请人 |
Samsung Electronics Co., Ltd. |
发明人 |
LEE Kil-Ho;PARK Se-Woong;KIM Ki-Joon |
分类号 |
H01L21/768;H01L23/528;H01L23/532;H01L23/522 |
主分类号 |
H01L21/768 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
Suwon-si KR |