发明名称 ANALYSIS OF IMPURITY ELEMENT DISTRIBUTED IN THIN-FILM LAYER CONSTITUTING LIQUID CRYSTAL PANEL AND LIQUID CRYSTAL PANEL CONSTITUTED BY USING THIN-FILM LAYER, WHEREIN THE AMOUNT OF IMPURITY ELEMENT IS CONFIRMED TO BE LESS THAN SPECIFIED VALUE BY ANALYSIS THEREOF
摘要 PROBLEM TO BE SOLVED: To confirm the remaining amount of anion impurities such as halogen-based elements and sulfur distributed in the depth direction from the surface of the orientation film of a liquid crystal panel having the multilayered thin-film structure. SOLUTION: As the analysis method for mainly halogen-based elements and sulfur distributed in a multilayered thin-film layer constituting a liquid crystal panel, wherein orientation films 6A and 6B are formed at the uppermost layer in contact with a liquid crystal layer 10A at least at the inner surfaces of a pair of glass substrates 1A and 1B, silver thin films with the thickness of 1-50nm are formed on the surfaces of the orientation films 6A and 6B. After the heating at 350 deg.C-450 deg.C for 5-30 minutes, cooling is performed to a room temperature. Ion milling is performed in the depth direction of the thin film layer from the forming surface of the silver thin film. The distribution intensity and the distribution thicknesses of chlorine(C), fluorine(F), bromine(Br) and sulfur(S) among the halogen-based elements distributed in the depth direction are confirmed by the element analysis.
申请公布号 JPH09145643(A) 申请公布日期 1997.06.06
申请号 JP19950305915 申请日期 1995.11.24
申请人 HITACHI LTD 发明人 EZAWA MASAYOSHI;MISUMI AKIRA;KINUGAWA KIYOSHIGE;MORISHITA TOSHIKAZU;KAWAGOE HIROMI;WATANABE SUMIKO
分类号 G01N23/225;G01M11/00;G02F1/13;G02F1/1337 主分类号 G01N23/225
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