| 摘要 |
PROBLEM TO BE SOLVED: To make the junction of a collector to a p-type compound semiconductor good, by joining the collector to the p-type compound semiconductor, interposing a chevrel phase compound between them. SOLUTION: On a transparent glass substrate 1 with a transparent electrode 2 made of stannum oxide, a CdS layer 3 is formed decomposing thermally diethyl dithiocarbamate cadmium complex. Thereon, a CdTe layer 4 is formed to form thereafter a Cu2 Mo6 S8 layer 5 of a copper chevrel phase compound layer. Finally, a collector layer 6 is formed by the coating, heating and curing of a carbon paste. When to the CdTe layer 4 the Cu2 Mo6 S8 layer 5 is joined to be burned, copper is diffused to the CdTe layer 4, making it into a p-type semiconductor. The remaining Cu2 Mo6 S8 layer 5 on the CdTe layer 4 is changed into a low-resistance semiconductor layer with a work function of about 5eV to make its good joining state to the CdTe layer 4 possible. |
