摘要 |
<p>PROBLEM TO BE SOLVED: To observe a defective place generated in a pattern layer of a semiconductor element in a rear of a silicon board. SOLUTION: In a wafer having a defective place 15 generated in a pattern layer 12, a proximate part of the defective place 15 is cut, a test piece of a specified size is prepared by molding resin 13 on the pattern layer 12, a rear of a test piece having the defective place 15 is polished so that it has a specified inclination to a horizontal surface of the pattern layer 12 and a defective place generated in a pattern layer of a semiconductor element can be observed in a rear by etching a polished surface.</p> |