发明名称 MANUFACTURE OF TEST PIECE FOR DEFECT ADJUSTMENT OF SEMICONDUCTOR ELEMENT
摘要 <p>PROBLEM TO BE SOLVED: To observe a defective place generated in a pattern layer of a semiconductor element in a rear of a silicon board. SOLUTION: In a wafer having a defective place 15 generated in a pattern layer 12, a proximate part of the defective place 15 is cut, a test piece of a specified size is prepared by molding resin 13 on the pattern layer 12, a rear of a test piece having the defective place 15 is polished so that it has a specified inclination to a horizontal surface of the pattern layer 12 and a defective place generated in a pattern layer of a semiconductor element can be observed in a rear by etching a polished surface.</p>
申请公布号 JPH09219429(A) 申请公布日期 1997.08.19
申请号 JP19960209243 申请日期 1996.07.19
申请人 GENDAI DENSHI SANGYO KK 发明人 KU CHIYON FUE;PAKU DOU JIN
分类号 G01N1/32;G01N1/04;G01N1/36;G01N23/225;H01L21/306;H01L21/66;(IPC1-7):H01L21/66 主分类号 G01N1/32
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