| 摘要 |
PURPOSE:To obtain perfect dry lithography and ultrafine working process by forming a thin orientable film in a vacuum on an aluminum substrate as a thin org. film resist. CONSTITUTION:The lithography is executed by coating the org. film 2 on a substrate 1 consisting of silicon, GaAs, etc., then forming the aluminum film 3 thereon, and executing dry coating under non-oxidative conditions by sputtering, etc. The thin org. orientable film 4 is formed on the aluminum coating film 3 and is drawn with patterns by an electron beam, etc. Development is executed by a method for evaporating low mol. wt. molecules. Etching of the aluminum film is executed by gaseous chlorine with the pattern of the orientable org. film formed in such a manner as a mask; further, substrate working is executed by oxygen plasma. The complete lithography and ultrafine working process are thereby obtd. |
