| 摘要 |
PURPOSE:To improve characteristics such as electrostatic chargeability, dark decay, photosensitivity, and ghosts by constituting a photoconductive layer of specific non-single crystalline silicon carbide and forming the layer into a layer structure without contg. a graphite structure of contg. the structure at <=1% per unit volume. CONSTITUTION:The photoconductive layer is constituted of the non-single crystalline silicon carbide which contains 1-10atomic% hydrogen atom and 5-15atomic% carbon atom and in which the ratio of the expansion and contraction mode of the C-H bond by IR absorption spectra and the expansion and contraction mode of the Si-H bond is 0.01-0.05; in addition, the above-mentioned layer is made into the structure without contg. the graphite structure or contg. the structure at <=1% per unit volume. The base to be used may be conductive or has an electrically insulating characteristic. The characteristics such as electrostatic chargeability, dark decay, photosensitivity, and ghosts are improved in this way. |
