SEMICONDUCTOR LIGHT EMITTING DIODE, WAFER AND THEIR MANUFACTURING METHOD

摘要

PROBLEM TO BE SOLVED: To provide a surface emission semiconductor laser device with a semiconductor multilayer mirror having high reflecting power, a surface optical resonator and semiconductor photodetector. SOLUTION: A semiconductor multilayer film mirror 2 comprising combination of a GaAs and InGaAs thin film and an InA P thin film are grown on the first substrate 1 made of GaAs. After joining the semiconductor layers 11-15 including a laser active layer 1 grown on the second compound semiconductor substrate 10 to the semiconductor multilayer film mirror 2, the second compound semiconductor substrate 10 is etched away to manufacture a semiconductor wafer and to manufacture a surface emission laser. In such a constitution, the semiconductor multilayer film mirror 2 having high reflecting power and capable of being grown on a specific directional surface can be so formed as to have the in-plane anisotropy thereby enabling a laser having a specific polarization to be manufactured.