Semiconductor structure with insertion layer and method for manufacturing the same

摘要

A semiconductor structure and a method for forming the same are provided. The semiconductor structure includes a substrate, an interfacial layer formed over the substrate, and an insertion layer formed over the interfacial layer. The semiconductor structure further includes a gate dielectric layer formed over the insertion layer and a gate structure formed over the gate dielectric layer. In addition, the insertion layer is made of M1Ox, and M1 is a metal, O is oxygen, and x is a value greater than 4.

主权项

1. A semiconductor structure, comprising:
a substrate; an interfacial layer formed over the substrate; an insertion layer formed over the interfacial layer; a gate dielectric layer formed over the insertion layer; and a gate structure formed over the gate dielectric layer, wherein the insertion layer is made of M1Ox, and M1 is a metal, O is oxygen, and x is a value greater than 4.