| 摘要 |
PROBLEM TO BE SOLVED: To improve characteristics by lessening impurities in a semiconductor. SOLUTION: A semiconductor device, formed on an insulating substrate includes an intrinsic or substantially intrinsic non-crystalline silicon semiconductor thin-film formed by a vapor phase method using high-purity silicade gas, or by a vapor phase method using silicade gas purified by a purification container. The oxygen concentration in the thin-film is reduced to 5×10<18> cm<-3> or below or to the limit of detection by SIMS or below, and the carbon concentration is reduced to 4×10<18> cm<-3> or below or to the limit of detection by SIMS or below. If this semiconductor device is applied to an I layer in a photoelectric transfer device having a PIN junction, a staebler-Wronski effect that deteriorates photoconductivity due to casting of light can be eliminated. |
