发明名称 |
Deposition Methods For Uniform And Conformal Hybrid Titanium Oxide Films |
摘要 |
Methods for depositing titanium oxide films by atomic layer deposition are disclosed. Titanium oxide films may include a titanium nitride cap, an oxygen rich titanium nitride cap or a mixed oxide nitride layer. Also described are methods for self-aligned double patterning including titanium oxide spacer films. |
申请公布号 |
US2016372324(A1) |
申请公布日期 |
2016.12.22 |
申请号 |
US201615184521 |
申请日期 |
2016.06.16 |
申请人 |
Applied Materials, Inc. |
发明人 |
Kao Chien-Teh;Schmiege Benjamin;Lu Xuesong;Huang Juno Yu-Ting;Lei Yu;Lee Yung-Hsin;Gandikota Srinivas;Jakkaraju Rajkumar;Wang Chikuang Charles;Saheli Ghazal;Wang Benjamin C.;Lu Xinliang;Lei Pingyan |
分类号 |
H01L21/02;H01L21/306 |
主分类号 |
H01L21/02 |
代理机构 |
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代理人 |
|
主权项 |
1. A method of forming a TiO film, the method comprising:
sequentially exposing a substrate surface to a first titanium-containing precursor and an oxygen-containing reactant to form an initial TiO film with a thickness in the range of about 80% to about 99% of a predetermined thickness of the TiO film; and sequentially exposing the initial TiO film to a second titanium-containing precursor and a nitrogen-containing reactant to form a TiN capped TiO film with the predetermined thickness. |
地址 |
Santa Clara CA US |