发明名称 Deposition Methods For Uniform And Conformal Hybrid Titanium Oxide Films
摘要 Methods for depositing titanium oxide films by atomic layer deposition are disclosed. Titanium oxide films may include a titanium nitride cap, an oxygen rich titanium nitride cap or a mixed oxide nitride layer. Also described are methods for self-aligned double patterning including titanium oxide spacer films.
申请公布号 US2016372324(A1) 申请公布日期 2016.12.22
申请号 US201615184521 申请日期 2016.06.16
申请人 Applied Materials, Inc. 发明人 Kao Chien-Teh;Schmiege Benjamin;Lu Xuesong;Huang Juno Yu-Ting;Lei Yu;Lee Yung-Hsin;Gandikota Srinivas;Jakkaraju Rajkumar;Wang Chikuang Charles;Saheli Ghazal;Wang Benjamin C.;Lu Xinliang;Lei Pingyan
分类号 H01L21/02;H01L21/306 主分类号 H01L21/02
代理机构 代理人
主权项 1. A method of forming a TiO film, the method comprising: sequentially exposing a substrate surface to a first titanium-containing precursor and an oxygen-containing reactant to form an initial TiO film with a thickness in the range of about 80% to about 99% of a predetermined thickness of the TiO film; and sequentially exposing the initial TiO film to a second titanium-containing precursor and a nitrogen-containing reactant to form a TiN capped TiO film with the predetermined thickness.
地址 Santa Clara CA US