| 摘要 |
The invention concerns a method for producing at least a suspended element (7), by micro-machining, using an etching technique, of a structure comprising a substrate (1) successively covered with a first so-called blocking layer (2), produced in a first material, and with a second layer (3) produced in a second material and in which the suspended element (7) is shaped. The method uses a dry etching technique using a gas whose selectivity enables the etching of the second layer (3) without affecting the blocking layer (2), under conditions established for an anisotropic etching of the second material, the etching being carried out according to a first phase for delimiting the suspended element (7) up to the level of the blocking layer (2) and being continued according to a second phase during which the release of the suspended element (7) results from the etching of the superficial layer of the suspended element delimited during the first phase and which is adjacent to the blocking layer (2).
|
