发明名称 SECONDARY ION MASS SPECTROMETRY
摘要 <p>PROBLEM TO BE SOLVED: To efficiently measure the concentration of trace elements in a sample suppressing so-called knock on effect and without requiring so much labor and time even when the sample is made of a material with a high insulating property and makes measuring elements hard to ionize. SOLUTION: In this secondary ion mass spectrometry, when determining the content concentration of specified elements contained in a sample 5 to be analyzed, the surface of the sample 5 to be analyzed is irradiated with a primary ion B1 to perform a quantitative analysis of the secondary ions B2 released from the sample 5 to be analyzed according to a mass. The primary ion B1 herein used is potassium ion. Preferably, the main component material of the sample 5 to be analyzed is zinc selenide and the above-mentioned specified element is nitrogen (N). Another main component material of the sample to be analyzed is silicon(Si) and the specified element is arsenic (As).</p>
申请公布号 JPH10282025(A) 申请公布日期 1998.10.23
申请号 JP19970094006 申请日期 1997.04.11
申请人 SONY CORP 发明人 KUSANAGI SUSUMU;MIWA SHIRO;KOBAYASHI HAJIME;NOMACHI ICHIRO
分类号 G01N23/225;H01J37/244;H01J37/256;(IPC1-7):G01N23/225 主分类号 G01N23/225
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